Uncovering the Different Components of Contact Resistance to Atomically Thin Semiconductors

Achieving good electrical contacts is one of the major challenges in realizing devices based on atomically thin 2D semiconductors. Several studies have examined this hurdle, but a universal understanding contact resistance (Rc) and an underlying approach to its reduction are currently lacking. Here, classical Rc transmission line model description materials experimentally examined, modification additional lateral component, namely, junction (Rjun) offered. A combination transfer length method contact-end measurements characterize monolayer MoS2 separate different components used. Technology computer-aided design simulations also used study Fermi-level pinned unpinned contacts. This finds that Rjun dominating component semiconductor devices, responsible for most back-gate bias temperature dependence. The experimental results help understand physics state-of-the-art engineering context minimizing Rjun.